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Freescale Semiconductor Technical Data
Document Number: MRF5P21045N Rev. 0, 4/2007
RF Power Field - Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. Dual path topology suitable for Doherty, quadrature, single - ended and push - pull applications. * Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 10 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 14.5 dB Drain Efficiency -- 25.5% IM3 @ 10 MHz Offset -- - 37 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset -- - 39 dBc in 3.84 MHz Channel Bandwidth * Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 45 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * 200C Capable Plastic Package * RoHS Compliant * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF5P21045NR1
2110 - 2170 MHz, 10 W AVG., 28 V 2 x W - CDMA, DUAL PATH LATERAL N - CHANNEL RF POWER MOSFET
CASE 1486 - 03, STYLE 1 TO - 270 WB - 4
RFinA/VGSA 3
2 RFoutA/VDSA
RFinB/VGSB 4
1 RFoutB/VDSB
(Top View) Note: Exposed backside of the package is the source terminal for the transistors.
Figure 1. Pin Connections Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS Tstg TJ Value - 0.5, +65 - 0.5, + 15 - 65 to +150 200 Unit Vdc Vdc C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 45 W CW Case Temperature 77C, 10 W CW Symbol RJC Value (1,2) 1.35 1.48 Unit C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2007. All rights reserved.
MRF5P21045NR1 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics
(1)
Symbol IDSS IDSS IGSS
Min -- -- --
Typ -- -- --
Max 10 1 1
Unit Adc Adc Adc
Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics (1) Gate Threshold Voltage (VDS = 10 Vdc, ID = 120 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 500 mAdc) Fixture Gate Quiescent Voltage (2) (VDD = 28 Vdc, ID = 500 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1.2 Adc) Dynamic Characteristics (1,3) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
VGS(th) VGS(Q) VGG(Q) VDS(on)
2 -- 6 0.2
-- 3.8 7.6 0.3
3.5 -- 10 0.35
Vdc Vdc Vdc Vdc
Crss Coss Ciss
-- -- --
0.9 124 247
-- -- --
pF pF pF
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 500 mA, Pout = 10 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss Gps D IM3 ACPR IRL 13.5 23.5 -- -- -- 14.5 25.5 - 37 - 39 - 12 16.5 -- - 35 - 37 -8 dB % dBc dBc dB
1. Measurement made with device in single - ended configuration. (See Figure 4, Possible Circuit Topologies) 2. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 3. Part internally matched both on input and output.
MRF5P21045NR1 2 RF Device Data Freescale Semiconductor
R1 VBIAS R2 C1 C2 Z7 C3 C4 C5 + C6 VSUPPLY
R3 RF INPUT Z1 C7 C8 C9 DUT Z2 Z3 Z4 Z5 Z6
Z8
Z14 RF OUTPUT
Z9
Z10
Z11
Z12 C12
Z13
Z15
C10
C11
C13
C14
C15
Z1, Z13 Z2 Z3 Z4 Z5 Z6, Z8 Z7
0.250 x 0.080 Microstrip 1.012 x 0.080 Microstrip 0.165 x 0.080 Microstrip 0.378 x 0.080 Microstrip 0.365 x 1.000 Microstrip 0.115 x 1.000 Microstrip 0.510 x 0.080 Microstrip
Z9 Z10 Z11 Z12 Z14, Z15 PCB
0.385 x 1.000 Microstrip 0.179 x 0.080 Microstrip 0.527 x 0.080 Microstrip 0.789 x 0.080 Microstrip 0.270 x 0.080 Microstrip Taconic TLX8 - 0300, 0.030, r = 2.55
Figure 2. MRF5P21045NR1 Test Circuit Schematic -- Single - Ended Configuration
Table 6. MRF5P21045NR1 Test Circuit Component Designations and Values -- Single - Ended Configuration
Part C1 C2, C3, C7, C12, C13 C4, C5, C14, C15 C6 C8, C10 C9 C11 R1, R2 R3 Description 220 nF Chip Capacitor 6.8 pF Chip Capacitors 6.8 F Chip Capacitors 220 F, 63 V Electrolytic Capacitor, Radial 1 pF Chip Capacitors 1.5 pF Chip Capacitor 0.5 pF Chip Capacitor 10 k, 1/4 W Chip Resistors 10 , 1/4 W Chip Resistor Part Number 18125C224KAT4A ATC100B6R8BT500XT C4532X5R1H685MT EMVY630ATR221MKE0S ATC100B1R0BT500XT ATC100B1R5BT500XT ATC100B0R5BT500XT CRCW12061001FKTA CRCW120610R0FKTA Manufacturer AVX ATC TDK Nippon Chemi - Con ATC ATC ATC Vishay Vishay
MRF5P21045NR1 RF Device Data Freescale Semiconductor 3
C1 R1 R2
C2
C4 C5
C3
R3
C6
C8 C9 CUT OUT AREA C7 C12 C10 C11
C13
C14 C15
MRF5P21045N Rev. 0
Figure 3. MRF5P21045NR1 Test Circuit Component Layout -- Single - Ended Configuration
Single -ended
l 4
l 4
Quadrature combined
l 4
Doherty
l 2
l 2
Push -pull
Figure 4. Possible Circuit Topologies
MRF5P21045NR1 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%) -7 IM3 (dBc), ACPR (dBc) -10 -13 -16 -19 -22 D, DRAIN EFFICIENCY (%) -5 IM3 (dBc), ACPR (dBc) -8 -11 -14 -17 -20 IRL, INPUT RETURN LOSS (dB) 650 mA -30 -40 -50 -60 -70 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 300 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 350 mA VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two -Tone Measurements 500 mA IDQ = 200 mA 800 mA IRL, INPUT RETURN LOSS (dB) 15.2 15 14.8 Gps, POWER GAIN (dB) 14.6 14.4 14.2 IRL 14 13.8 13.6 13.4 2060 ACPR 2080 2100 2120 2140 2160 2180 2200 IM3 -32 -36 -40 -44 2220 Gps D VDD = 28 Vdc, Pout = 10 W (Avg.) IDQ = 500 mA, 2-Carrier W-CDMA 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 32 28 24 20 16 -28
f, FREQUENCY (MHz)
Figure 5. 2 - Carrier W - CDMA Broadband Performance @ Pout = 10 Watts Avg.
14.8 14.6 Gps, POWER GAIN (dB) 14.4 14.2 14 13.8 13.6 IRL 13.4 13.2 13 2060 IM3 ACPR 2080 2100 2120 2140 2160 f, FREQUENCY (MHz) 2180 2200 D VDD = 28 Vdc, Pout = 20 W (Avg.) IDQ = 500 mA, 2-Carrier W-CDMA 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) Gps 46 42 38 34 30 -18 -22 -26 -30 -34 2220
Figure 6. 2 - Carrier W - CDMA Broadband Performance @ Pout = 20 Watts Avg.
17 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 800 mA 16 Gps, POWER GAIN (dB) 650 mA 15 500 mA 14 350 mA 13 12 11 200 mA VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two -Tone Measurements -10 -20
Figure 7. Two - Tone Power Gain versus Output Power
Figure 8. Third Order Intermodulation Distortion versus Output Power
MRF5P21045NR1 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc) -20 VDD = 28 Vdc, Pout = 45 W (PEP), IDQ = 500 mA Two -Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz -30 IM3 -L IM3 -U -40 IM5 -U -50 IM7 -L -60 0.1 1 10 100 TWO -TONE SPACING (MHz) IM7 -U IM5 -L 55 54 53 52 51 50 49 48 47 46 45 44 43 42 28
P6dB = 47.74 dBm (74.82 W) P3dB = 48.38 dBm (68.8 W)
Ideal
Pout, OUTPUT POWER (dBm)
P1dB = 47.78 dBm (60.1 W) Actual
VDD = 28 Vdc, IDQ = 500 mA Pulsed CW, 12 sec(on), 1% Duty Cycle f = 2140 MHz 29 30 31 32 33 34 35 36 37 38 39 40
Pin, INPUT POWER (dBm)
Figure 9. Intermodulation Distortion Products versus Tone Spacing
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 50 45 40 35 30 25 20 15 10 5 1 IM3 D ACPR 10 Gps VDD = 28 Vdc, IDQ = 500 mA f1 = 2135 MHz, f2 = 2145 MHz 2-Carrier W-CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF)
Figure 10. Pulsed CW Output Power versus Input Power
-30_C 25_C 85_C 25_C -30_C 25_C -30_C -10 -15 -20 -25 -30 -35 -40 TC = -30_C 85_C 25_C -45 -50 -55 100 IM3 (dBc), ACPR (dBc) D, DRAIN EFFICIENCY (%)
Pout, OUTPUT POWER (WATTS) CW
Figure 11. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power
17 16 Gps, POWER GAIN (dB) 15 14 13 12 11 10 0.1 VDD = 28 Vdc IDQ = 500 mA f = 2140 MHz 1 Gps -30_C 85_C 25_C 60 50 40 30 20 D 10 0 100 70
TC = -30_C 25_C 85_C
10
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain and Drain Efficiency versus CW Output Power
MRF5P21045NR1 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
16 108
14 Gps, POWER GAIN (dB) MTTF (HOURS) 80 107
12 VDD = 24 V 10 IDQ = 500 mA f = 2140 MHz 28 V 32 V
106
8
6 0 10 20 30 40 50 60 70 Pout, OUTPUT POWER (WATTS) CW
105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 10 W Avg., and D = 25.5%. MTTF calculator available at http:/www.freescale.com/rf. Select Tools/ Software/Application Software/Calculators to access the MTTF calcu- lators by product.
Figure 13. Power Gain versus Output Power
Figure 14. MTTF versus Junction Temperature
W - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 (dB) 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK -TO-AVERAGE (dB)
+20 +30 0 -10 -20 -30 -40 -50 -60 -70 -80 -25
3.84 MHz Channel BW
W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ $5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ $10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF
-ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW -IM3 in 3.84 MHz BW
+IM3 in 3.84 MHz BW
-20
-15
-10
-5
0
5
10
15
20
25
f, FREQUENCY (MHz)
Figure 15. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single - Carrier Test Signal
Figure 16. 2-Carrier W-CDMA Spectrum
MRF5P21045NR1 RF Device Data Freescale Semiconductor 7
Zo = 10
f = 2220 MHz
f = 2060 MHz Zload f = 2060 MHz Zsource f = 2220 MHz
VDD = 28 Vdc, IDQ = 500 mA, Pout = 10 W Avg. f MHz 2060 2080 2100 2120 2140 2160 2180 2200 2220 Zsource W 8.01 - j6.68 7.66 - j6.94 7.26 - j7.20 6.76 - j7.45 6.28 - j7.71 5.82 - j7.78 5.37 - j7.85 4.92 - j7.85 4.46 - j7.97 Zload W 4.38 - j4.62 4.27 - j4.43 4.12 - j4.04 3.98 - j3.90 3.81 - j3.69 3.73 - j3.50 3.65 - j3.30 3.57 - j3.11 3.49 - j2.92
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 17. Series Equivalent Source and Load Impedance -- Single - Ended Configuration MRF5P21045NR1 8 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
B E1 E3
2X
A
GATE LEAD
DRAIN LEAD
D1
4X
D e
b1 aaa M C A
4X
D2 c1 H
DATUM PLANE ZONE J
2X
2X
E
F
A1 A2 E2 E5 E4
2X
A
NOTE 7
C
SEATING PLANE
PIN 5
NOTE 8
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETER- MINED AT DATUM PLANE -H-. 5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE "b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. 7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY. 8. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. INCHES MIN MAX .100 .104 .039 .043 .040 .042 .712 .720 .688 .692 .011 .019 .600 --- .551 .559 .353 .357 .132 .140 .124 .132 .270 --- .346 .350 .025 BSC .164 .170 .007 .011 .106 BSC .004 DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 18.08 18.29 17.48 17.58 0.28 0.48 15.24 --- 14 14.2 8.97 9.07 3.35 3.56 3.15 3.35 6.86 --- 8.79 8.89 0.64 BSC 4.17 4.32 0.18 0.28 2.69 BSC 0.10
4
D3
3
RF Device Data Freescale Semiconductor
CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC
E5 BOTTOM VIEW
1
2
DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 e aaa
CASE 1486 - 03 ISSUE C TO - 270 WB - 4 PLASTIC
STYLE 1: PIN 1. 2. 3. 4. 5.
MRF5P21045NR1 9
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages * AN1955: Thermal Measurement Methodology of RF Power Amplifiers * AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date April 2007 * Initial Release of Data Sheet Description
MRF5P21045NR1 10 RF Device Data Freescale Semiconductor
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MRF5P21045NR1
Document Number: RF Device Data MRF5P21045N Rev. 0, 4/2007 Freescale Semiconductor
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